3D NAND TD Device Modeling Engineer

Join a multibillion-dollar global company that brings together amazing technology, people, and operational scale to become a powerhouse in the memory industry. Headquartered in Rancho Cordova, California, Solidigm combines elements of an established, successful technology company with the spirit, agility, and entrepreneurial mindset of a start-up. In addition to the U.S. headquarters and other facilities in the U.S., the company has international presence in Asia, Europe, and the Americas. Solidigm will continue to lead the world in innovating new Memory technologies with aspirations to be the #1 NAND memory company in the world. At Solidigm, we view problems as opportunities to define innovative solutions that hold the power to change the world and unleash the potential technological needs that the future holds. At Solidigm, we are One Team that fosters a diverse, equitable, and inclusive culture that embraces individual uniqueness and empowers us to bring our best selves to deliver excellence in support of Solidigm's vision and mission to be the go-to partner for optimized data storage solutions. You can be part of the takeoff of an innovative business that develops cutting-edge products, delivers strong business value for customers, provides an engaging workplace for its employees, and serves a greater impact on the world. This is a golden opportunity for the right applicant to join us and help design, build, and lead Solidigm. We want a diverse team of dedicated professionals who will not just be Solidigm team members but contribute to how we shape the future of the organization. We are seeking applicants who will grow and thrive in our culture; be customer inspired, trusting, innovative, team-oriented, inclusive, results driven, collaborative, passionate, and flexible.

As a TD Device Modeling Engineer, you will employ techniques and theories from areas of computational geometry, semiconductor device, materials science and engineering to build predictive models and provide concrete insights and solutions in 3D NAND Cell and CMOS technology scaling.

Key Responsibilities:

• Develops and codes various software programs, algorithms, and computational modeling tools
• Develops methods, processes, and systems for predictive TCAD simulations across NAND technology nodes to generate useful insights and solutions for overcoming scaling constraints in NAND Cell and CMOS devices.
• Collaborates extensively with PI and process teams for TCAD model development & deployment, designs DOE, proposes and validates solutions.
• Analyzes and correlates E-test data to inline parameters, identifies significant insights from data and models; interprets data from experiments and present analysis & insights to engineering teams and leader

Required:

• BS, MS, or PhD in a related science or engineering discipline
• 5~10 years of proven TD experience in relevant technical areas
• Experience in computational geometry and structure modeling
• Advanced skills in level sets, meshing, DOE, analysis, rendering
• Strong understanding of semiconductor physics, NAND device physics and scaling principles. 
• Demonstrated technical leadership and a track record of problem solving with creativity and out-of-box thinking
• Strong communication and collaboration skills to work effectively with cross-functional teams. The candidate will need to be a collaboration role model, establishing strong technical and personal credibility, ensuring on-time project success through influencing and working with other organizations

Preferred:

• Experience with Victory Process, SPX, SEM3D

Working Conditions: This position is primarily office-based. Some international travel is expected.

The compensation range for this role is $136,750 - $252,010. Actual compensation is influenced by a variety of factors including but not limited to skills, experience, qualifications, and geographic location. 

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